Semiconductor storage device

ABSTRACT

A semiconductor storage device includes a word line and a wiring, a first transistor controlled to connect the word line to the wiring, a first booster circuit configured to boost an output voltage thereof to a first voltage, a second transistor controlled to connect the first booster circuit to the wiring, and a control circuit configured to control the first booster circuit, and the first and second transistors during a read operation. During the read operation, the control circuit controls the first booster circuit to start boosting its output voltage to the first voltage while controlling the second transistor to connect the output of the first booster circuit to the wiring so that a voltage of the wiring rises together with the output voltage. After the output voltage has reached the first voltage, the control circuit controls the first transistor to connect the word line to the wiring.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2017-176686, filed Sep. 14, 2017, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor storagedevice.

BACKGROUND

A NAND flash memory has been known as a semiconductor storage device.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a configuration of a memorysystem according to a first embodiment.

FIG. 2 is a block diagram illustrating a configuration of asemiconductor storage device according to the first embodiment.

FIG. 3 is a circuit diagram illustrating a configuration of a memorycell array of the semiconductor storage device according to the firstembodiment.

FIG. 4 is a sectional diagram illustrating a configuration of the memorycell array of the semiconductor storage device according to the firstembodiment.

FIG. 5 is a block diagram illustrating an overview of configurations ofa row decoder and a driver set of the semiconductor storage deviceaccording to the first embodiment.

FIG. 6 is a circuit diagram illustrating configurations of atransmission transistor group and a block decoder group of thesemiconductor storage device according to the first embodiment.

FIG. 7 is a block diagram illustrating a configuration of a selectedword line circuit of the semiconductor storage device according to thefirst embodiment.

FIG. 8 is a block diagram illustrating configurations of a zoneselection unit and a chunk selection unit of the semiconductor storagedevice according to the first embodiment.

FIG. 9 is a circuit diagram illustrating a configuration of a switchcircuit provided in the zone selection unit of the semiconductor storagedevice according to the first embodiment.

FIG. 10 is a circuit diagram illustrating a configuration of a switchcircuit provided in the chunk selection unit of the semiconductorstorage device according to the first embodiment.

FIG. 11 is a circuit diagram illustrating a configuration of a driverset of the semiconductor storage device according to the firstembodiment.

FIG. 12 is a schematic diagram illustrating an overview of a readoperation performed in the semiconductor storage device according to thefirst embodiment.

FIG. 13 is a timing chart illustrating the read operation performed inthe semiconductor storage device according to the first embodiment.

FIG. 14 is a circuit diagram illustrating a charging route of wiringwhen a read operation is performed in a comparative example.

FIG. 15 is a circuit diagram illustrating a charging route of wiringwhen the read operation is performed in the semiconductor storage deviceaccording to the first embodiment.

FIG. 16 is a circuit diagram illustrating a configuration of a driverset of a semiconductor storage device according to a second embodiment.

FIG. 17 is a timing chart illustrating a read operation performed in thesemiconductor storage device according to the second embodiment.

FIG. 18 is a timing chart illustrating a read operation performed in asemiconductor storage device according to a first modified example ofthe second embodiment.

FIG. 19 is a timing chart illustrating a read operation performed in asemiconductor storage device according to a second modified example ofthe second embodiment.

DETAILED DESCRIPTION

Embodiments reduce time which is required for a semiconductor storagedevice to read data.

In general, according to one embodiment, a semiconductor storage deviceincludes a word line and a wiring, a first transistor that is controlledto connect the word line to the wiring, a first booster circuitconfigured to boost an output voltage thereof to a first voltage, asecond transistor that is controlled to connect an output of the firstbooster circuit to the wiring, and a control circuit configured tocontrol the first booster circuit, and the first and second transistorsduring a read operation. During the read operation, the control circuitcontrols the first booster circuit to start boosting the output voltagethereof to the first voltage while controlling the second transistor toconnect the output of the first booster circuit to the wiring so that avoltage of the wiring rises together with the output voltage of thefirst booster circuit. After the output voltage of the first boostercircuit has reached the first voltage, the control circuit controls thefirst transistor to connect the word line to the wiring.

Hereinafter, embodiments will be described with reference to theaccompanying drawings. Further, in the description below, a commonreference symbol is given to components which have the same function andconfiguration. In addition, in a case where a plurality of components isgiven the same reference symbol, the components are distinguished byattaching a subscript to the common reference symbol. Further, in a casewhere it is not necessary to distinguish the components, only the commonreference symbol is used and the subscript is not used.

1. First Embodiment

A semiconductor storage device according to a first embodiment will bedescribed.

1.1 Configuration

First, a configuration of the semiconductor storage device according tothe first embodiment will be described.

1.1.1 Overall Configuration of Memory System

An example of a configuration of a memory system according to the firstembodiment will be described with reference to FIG. 1. FIG. 1 is a blockdiagram illustrating the example of the configuration of the memorysystem according to the first embodiment. A memory system 1 communicateswith, for example, an external host device which is not illustrated inthe drawing. The memory system 1 stores data from the host device (notillustrated in the drawing), and, in addition, reads the data from thehost device.

As illustrated in FIG. 1, the memory system 1 includes a controller 10and a semiconductor storage device (NAND flash memory) 20. Thecontroller 10 receives a command from the host device, and controls thesemiconductor storage device 20 based on the received command.Specifically, the controller 10 writes data, which is instructed to bewritten from the host device, in the semiconductor storage device 20,reads data, which is instructed to be read from the host device, fromthe semiconductor storage device 20, and transmits the data to the hostdevice. The controller 10 is connected to the semiconductor storagedevice 20 via a NAND bus. The semiconductor storage device 20 includes aplurality of memory cells, and non-volatilely stores data.

The NAND bus transmits and receives respective signals /CE, CLE, ALE,/WE, /RE, /WP, /RB, and I/O<7:0> according to a NAND interface viaindividual signal lines. The signal/CE is a signal used to enable thesemiconductor storage device 20. The signal CLE notifies thesemiconductor storage device 20 that the signal I/O<7:0>, which flows tothe semiconductor storage device 20, is an address while the signal CLEis at an “H (High)” level. The signal ALE notifies the semiconductorstorage device 20 that the signal I/O<7:0>, which flows to thesemiconductor storage device 20 while the signal ALE is at an “H (High)”level, is an address. The signal/WE is used to instruct to fetch thesignal I/O<7:0>, which flows to the semiconductor storage device 20, tothe semiconductor storage device 20 while the signal/WE is at an “L(Low)” level. The signal/RE is used to instruct the semiconductorstorage device 20 to output the signal I/O<7:0>. The signal/WP instructsto prohibit the semiconductor storage device 20 from writing and erasingdata. The signal/RB indicates whether the semiconductor storage device20 is in a ready state (i.e., a state in which a command from theoutside can be received) or in a busy state (i.e., state in which thecommand from the outside cannot be received). The signal I/O<7:0> is,for example, an 8-bit signal. The signal I/O<7:0> is a substance of datawhich is transmitted and received between the semiconductor storagedevice 20 and the controller 10, and includes a command CMD, an addressADD, and data DAT. The data DAT includes write data and read data.

1.1.2 Configuration of Controller

Subsequently, the controller of the memory system according to the firstembodiment will be described with reference to FIG. 1. The controller 10includes a processor (Central Processing Unit (CPU)) 11, a built-inmemory (Random Access Memory (RAM)) 12, an Error Check and Correction(ECC) circuit 13, a NAND interface circuit 14, a buffer memory 15, and ahost interface circuit 16.

The processor 11 controls the entire operation of the controller 10. Theprocessor 11 issues a read command based on the NAND interface withrespect to the semiconductor storage device 20 in response to, forexample, a read command of data received from the host device. Theoperation is the same as in a case of write and erase. In addition, theprocessor 11 has a function of performing various calculations withrespect to read data from the semiconductor storage device 20.

The built-in memory 12 is, for example, a semiconductor storage devicesuch as a Dynamic RAM (DRAM), and is used as a work area of theprocessor 11. The built-in memory 12 stores firmware used to manage thesemiconductor storage device 20, various management tables, and thelike.

The ECC circuit 13 performs processes of error detection and errorcorrection. More specifically, in a case where data is written, the ECCcircuit 13 generates an ECC symbol for each set having a certain numberof data based on the data received from the host device. In addition, ina case where the data is read, ECC is decoded based on the ECC symbol,and existence/non-existence of an error is detected. Furthermore, in acase where the error is detected, a bit location thereof is specified,and the error is corrected.

The NAND interface circuit 14 is connected to the semiconductor storagedevice 20 via the NAND bus, and performs communication with thesemiconductor storage device 20. The NAND interface circuit 14 transmitsthe command CMD, the address ADD, and the write data to thesemiconductor storage device 20 according to an instruction of theprocessor 11. In addition, the NAND interface circuit 14 receives theread data from the semiconductor storage device 20.

The buffer memory 15 temporarily stores the data or the like which isreceived by the controller 10 from the semiconductor storage device 20and the host device. The buffer memory 15 is used as a storage area thattemporarily stores, for example, the read data from the semiconductorstorage device 20, results of the calculations with respect to the readdata, and the like.

The host interface circuit 16 is connected to the host device, andperforms communication with the host device. The host interface circuit16 transmits, for example, the command and the data, which are receivedfrom the host device, to the processor 11 and the buffer memory 15,respectively.

1.1.3 Configuration of Semiconductor Storage Device

Subsequently, an example of a configuration of the semiconductor storagedevice according to the first embodiment will be described withreference to FIG. 2. FIG. 2 is a block diagram illustrating the exampleof the configuration of the semiconductor storage device according tothe first embodiment.

The semiconductor storage device 20 includes a memory cell array 21, aninput/output circuit 22, a logic control circuit 23, a register 24, asequencer 25, a voltage generation circuit 26, a driver set 27, a rowdecoder 28, and a sense amplifier module 29.

The memory cell array 21 includes a plurality of blocks BLK (BLK0, BLK1,. . . ). The block BLK includes a plurality of nonvolatile memory celltransistors (not illustrated in the drawing) associated with word linesand bit lines. The block BLK becomes, for example, a data erase unit,and data in the same block BLK is erased collectively. Each block BLKincludes a plurality of string units SU (SU0, SU1, SU2, . . . ). Eachstring unit SU is a set of NAND strings NS. The NAND string NS includesthe plurality of memory cell transistors. Further, it is possible to setthe number of blocks in the memory cell array 21, the number of stringunits in one block BLK, and the number of NAND strings in one stringunit SU is not limited to any specific number.

The input/output circuit 22 transmits and receives the signal I/O<7:0>to and from the controller 10. The input/output circuit 22 transmits thecommand CMD and the address ADD in the signal I/O<7:0> to the register24. The input/output circuit 22 transmits and receives the write dataand the read data to and from the sense amplifier module 29.

The logic control circuit 23 receives the signals/CE, CLE, ALE, /WE,/RE, and/WP from the controller 10. In addition, the logic controlcircuit 23 transmits the signal/RB to the controller 10, therebynotifying to the outside of a state of the semiconductor storage device20.

The register 24 stores the command CMD and the address ADD. The register24 transmits the address ADD to the row decoder 28 and the senseamplifier module 29, and transmits the command CMD to the sequencer 25.

The sequencer 25 receives the command CMD, and controls the entiresemiconductor storage device 20 according to a sequence based on thereceived command CMD.

The voltage generation circuit 26 generates voltages, which arenecessary for operations of writing, reading, and erasing the data,based on an instruction from the sequencer 25. The voltage generationcircuit 26 supplies the generated voltages to the driver set 27.

The driver set 27 includes a plurality of drivers, and supplies variousvoltages from the voltage generation circuit 26 to the row decoder 28and the sense amplifier module 29 based on an address from the register24. The driver set 27 supplies various voltages to the row decoder 28based on, for example, a row address of the addresses.

The row decoder 28 receives the row address of the address ADD from theregister 24, and selects the block BLK or the like based on, forexample, a block address in the row address. Furthermore, the voltage istransmitted from the driver set 27 to the selected block BLK via the rowdecoder 28.

The voltage generation circuit 26, the driver set 27, and the rowdecoder 28 will be described in detail later.

The sense amplifier module 29 senses the read data, which is read at abit line from the memory cell transistor, in a case where the data isread, and transmits the sensed read data to the input/output circuit 22.The sense amplifier module 29 transmits the write data, which is writtenvia the bit line, to the memory cell transistor in a case where the datais written. In addition, the sense amplifier module 29 receives a columnaddress of the address ADD from the register 24, and outputs data of thecolumn based on the column address.

1.1.4 Configuration of Memory Cell Array

Subsequently, a configuration of the memory cell array of thesemiconductor storage device according to the first embodiment will bedescribed with reference to FIG. 3. FIG. is an example of a circuitdiagram illustrating the configuration of the memory cell array of thesemiconductor storage device according to the first embodiment.

As illustrated in FIG. 3, each of the NAND strings NS includes, forexample, 96 memory cell transistors MT (MT0 to MT95), a selecttransistor ST1, and a select transistor ST2. Further, the number ofmemory cell transistors MT is not limited to 96. The number of memorycell transistors MT may be 8, 16, 32, 64, 128, or the like, and thenumber is not limited. The memory cell transistor MT includes a controlgate and a stacked layer gate which includes a charge storage layer. Therespective memory cell transistors MT are connected in series betweenthe select transistors ST1 and ST2. Further, in the description below,“connection” includes a case where another conductive element isinterposed therebetween.

In a certain block BLK, gates of the select transistors ST1 of thestring units SU0 to SU3 are respectively connected to select gate linesSGD0 to SGD3. In addition, gates of the select transistors ST2 of allthe string units SU in the block BLK are commonly connected to a selectgate line SGS. The control gates of the memory cell transistors MT0 toMT95 in the same block BLK are respectively connected to word lines WL0to WL95. That is, the word lines WL of the same address are commonlyconnected to all the string units SU in the same block BLK, and theselect gate line SGS is commonly connected to all the string units SU inthe same block BLK. In contrast, the select gate line SGD is connectedto only one string unit SU in the same block BLK.

In addition, another end of each of the select transistors ST1 of theNAND strings NS at the same row among the NAND strings NS which aredisposed in a matrix configuration in the memory cell array 21 isconnected to any one of m bit lines BL (BL0 to BL (m−1) (m is a naturalnumber)). In addition, the bit lines BL are commonly connected to theNAND strings NS at the same column over the plurality of blocks BLK.

In addition, another end of each of the select transistors ST2 isconnected to a source line CELSRC. The source line CELSRC is commonlyconnected to the plurality of NAND strings NS over the plurality ofblocks BLK.

Further, in the first embodiment, as an example, a set of three adjacentword lines WL is defined as one “zone Zn”. Therefore, 32 zones Zn0 toZn31 are provided to correspond to the 96 word lines WL0 to WL95. Morespecifically, the zone Zn0 includes the word lines WL0 to WL2. The zoneZn1 includes the word lines WL3 to WL5, and the zone Zn2 includes theword lines WL6 to WL8. In the same manner, the zone Zn31 includes theword lines WL93 to 95.

As described above, data is erased, for example, with respect to thememory cell transistors MT in the same block BLK as a unit. In contrast,data may be read and written for the plurality of memory celltransistors MT, which are commonly connected to any one of the wordlines WL in any one of the string units SU of any one of the blocks BLK,as a unit. A set of the memory cell transistors MT, which share the wordline WL in one string unit SU, is referred to as, for example, a cellunit CU. That is, the cell unit CU is a set of the memory celltransistors MT on which the write or read operation is performed as aunit.

Further, it is possible for one memory cell transistor MT to store, forexample, a plurality of bit data. Furthermore, in the same cell unit CU,a set of one bits, consisting of one bit from each of the memory celltransistors MT in the same cell unit CU, is referred to as a “page”.That is, it is possible to define the “page” as a part of a memory spaceformed in a set of memory cell transistors MT in the same cell unit CU.

Subsequently, a sectional structure of the memory cell array 21 will bedescribed with reference to FIG. 4. FIG. 4 illustrates an example of thesectional structure of some parts of the memory cell array of thesemiconductor storage device according to the first embodiment.Specifically, FIG. 4 illustrates two parts, that is, string units SU0and SU1 in one block BLK. Specifically, FIG. 4 illustrates two NANDstrings NS and parts around the NAND strings of each of the two stringunits SU0 and SU1. Furthermore, the NAND strings NS each having theconfiguration illustrated in FIG. 4 are arranged in an X direction and aY direction. For example, a set of the plurality of NAND strings NS,which are arranged in the X direction and the Y direction, correspondsto one string unit SU.

The semiconductor storage device 20 is provided on a semiconductorsubstrate 30. In the description below, a surface which is parallel tothe surface of the semiconductor substrate 30 is an XY plane, and adirection which is perpendicular to the XY plane is a Z direction. Inaddition, the X direction and the Y direction are orthogonal to eachother.

A p-type well region 30 p is provided on an upper part of thesemiconductor substrate 30. The plurality of NAND strings NS areprovided on the p-type well region 30 p. That is, on the p-type wellregion 30 p, for example, a wiring layer 31 which functions as theselect gate line SGS, a 96-layered wiring layer 32 (WL0 to WL95) whichfunctions as the word lines WL0 to WL95, and a wiring layer 33 whichfunctions as the select gate line SGD are sequentially stacked. Thewiring layers 31 and 33 may each include plural layers. Insulating filmswhich are not illustrated in the drawing are provided between thestacked wiring layers 31 to 33.

The wiring layer 31 is commonly connected to, for example, gates of therespective select transistors ST2 of the plurality of NAND strings NS inone block BLK. The wiring layer 32 is commonly connected to controlgates of the respective memory cell transistors MT of the plurality ofNAND strings NS in one block BLK. The wiring layer 33 is commonlyconnected to gates of the respective select transistors ST1 of theplurality of NAND strings NS in one string unit SU.

A memory hole MH is provided to penetrate the wiring layers 33, 32, and31 and to reach the p-type well region 30 p. On a side surface of thememory hole MH, a block insulating film 34, a charge storage layer 35(which in one example is an insulating film), and a tunnel oxide film 36are sequentially provided. In the memory hole MH, a semiconductor pillar37 is embedded. The semiconductor pillar 37 is, for example, an undopedpolysilicon and functions as a current path of the NAND strings NS. Awiring layer 38, which functions as the bit line BL, is provided at anupper end of the semiconductor pillar 37.

As described above, on an upper side of the p-type well region 30 p, theselect transistor ST2, the plurality of memory cell transistors MT, andthe select transistor ST1 are sequentially stacked, and one memory holeMH corresponds to one NAND string NS.

At an upper part of the p-type well region 30 p, an n⁺-type impuritydiffusion area 39 and a p⁺-type impurity diffusion area 40 are provided.On an upper surface of the n⁺-type impurity diffusion area 39, a contactplug 41 is provided. On an upper surface of the contact plug 41, awiring layer 42 which functions as the source line CELSRC is provided.On the upper surface of the p⁺-type impurity diffusion area 40, acontact plug 43 is provided. On the upper surface of the contact plug43, a wiring layer 44 which functions as a well line CPWELL is provided.

Further, another configuration may be used as the configuration of thememory cell array 21. Other possible configurations of the memory cellarray 21 are disclosed in, for example, U.S. patent application Ser. No.12/407,403, entitled “three-dimensionally stacked nonvolatilesemiconductor memory,” filed on Mar. 19, 2009, U.S. patent applicationSer. No. 12/406,524 entitled “three-dimensionally stacked nonvolatilesemiconductor memory,” filed on Mar. 18, 2009, U.S. patent applicationSer. No. 12/679,991 entitled “nonvolatile semiconductor storage deviceand manufacturing method thereof” filed on Mar. 25, 2010, and U.S.patent application Ser. No. 12/532,030 entitled “semiconductor memoryand manufacturing method thereof,” filed on Mar. 23, 2009. All the abovepatent applications are incorporated by reference herein.

1.1.5 Configurations of Row Decoder and Driver Set

Subsequently, configurations of the row decoder and the driver set ofthe semiconductor storage device according to the first embodiment willbe described.

1.1.5.1 Overview

First, configurations of the row decoder and the driver set of thesemiconductor storage device according to the first embodiment will bedescribed with reference to FIG. 5.

FIG. 5 is a block diagram illustrating an overview of a configurationincluding the row decoder and the driver set of the semiconductorstorage device according to the first embodiment. An example of FIG. 5illustrates a case where the memory cell array 21 includes eight blocksBLK0 to BLK7.

As illustrated in FIG. 5, the row decoder 28 includes transmissionswitch groups 28_0 and 28_1, a block decoder group 28_2, a word lineselection circuit 28_3, and a select gate line selection circuit 28_4.

The transmission switch group 28_0 is connected to, for example, each ofthe blocks BLK0 to BLK3. The transmission switch group 28_0 is connectedto each of the blocks BLK0 to BLK3 via a set of the word lines WL0 toWL95, the select gate lines SGD0 to SGD3, and SGS, which are differentfrom each other.

The transmission switch group 28_1 is connected to, for example, each ofthe blocks BLK4 to BLK7. The transmission switch group 28_1 is connectedto each of the blocks BLK4 to BLK7 via a set of the word lines WL0 toWL95, the select gate lines SGD0 to SGD3, and SGS which are differentfrom each other.

The block decoder group 28_2 is connected to the transmission switchgroups 28_0 and 28_1, and outputs a block selection signal which selectsrelevant one of the blocks BLK with respect to each of the transmissionswitch groups 28_0 and 28_1. In the example of FIG. 5, the block decodergroup 28_2 simultaneously selects one of the blocks BLK0 to BLK3corresponding to the transmission switch group 28_0 and one of theblocks BLK4 to BLK7 corresponding to the transmission switch group 28_1according to one block selection signal. Connection of the transmissionswitch groups 28_0 and 28_1 to the block decoder group 28_2 will bedescribed in detail later.

Further, in the description below, description will be performed basedon the configuration in which one block decoder group 28_2 is providedwith respect to the transmission switch groups 28_0 and 28_1. However, aconfiguration in which one block decoder group 28_2 is provided for eachof the transmission switch groups 28_0 and 28_1 may be employed.

The word line selection circuit 28_3 is connected to the transmissionswitch group 28_0 via a wiring group CGI0, and is connected to thetransmission switch group 28_1 via the wiring group CGI1. Each of thewiring groups CGI0 and CGI1 includes, for example, 96 wirings GWL0 toGWL95. The word line selection circuit 28_3 will be described in detaillater.

The select gate line selection circuit 28_4 is connected to thetransmission switch group 28_0 via a wiring group SGI0, and is connectedto the transmission switch group 28_1 via a wiring group SGI1. Each ofthe wiring groups SGI0 and SGI1 includes, for example, four wiringsGSGD0 to GSGD3 and one wiring GSGS.

As described above, the blocks BLK0 to BLK7 are grouped into sets ofblocks BLK which are connected by a set of the wiring groups CGI and SGIwhich are different from each other (in the example of FIG. 5, a set ofthe wiring group CGI0 and SGI0 or a set of the wiring groups CGI1 andSGI1). The set of the wiring groups CGI and SGI is also referred to as a“chunk CNK”. For example, the set of the wiring groups CGI0 and SGI0corresponds to chunk CNK0, and the set of the wiring groups CGI1 andSGI1 corresponds to chunk CNK1.

The driver set 27 includes, for example, CG drivers 27_0 to 27_23, a CGUdriver 27_24, an UCG driver 27_25, an SGD_SEL driver 27_26, an SGD_USELdriver 27_27, an SGS_SEL driver 27_28, an SGS_USEL driver 27_29, and anUSG driver 27_30.

The respective CG drivers 27_0 to 27_23, the CGU driver 27_24, and theUCG driver 27_25 are connected to the word line selection circuit 28_3via wirings CG0 to CG23, CGU, and UCG.

The CG drivers 27_0 to 27_23 supply voltages to be applied to 24 wiringsGWL corresponding to 24 word lines WL including a selected word line WLamong the 96 wirings GWL, which are connected to a selected block BLK,in, for example, the read operation. The CGU driver 27_24 suppliesvoltages to be applied to 72 wirings GWL corresponding to 72 wirings GWLto which voltages are not supplied from the CG driver 27_0 to 27_23among the 96 wirings GWL which are connected to the selected block BLKin, for example, the read operation. The UCG driver 27_25 suppliesvoltages to be applied to the wirings GWL which are not connected to theselected block BLK in, for example, the read operation. The CG drivers27_0 to 27_23, the CGU driver 27_24, and the UCG driver 27_25 will bedescribed in detail later.

The SGD_SEL driver 27_26, the SGD_USEL driver 27_27, the SGS_SEL driver27_28, the SGS_USEL driver 27_29, and the USG driver 27_30 are connectedto the select gate line selection circuit 28_4 via the wirings SGD_SEL,SGD_USEL, SGS_SEL, SGS_USEL, and USG, respectively.

The SGD_SEL driver 27_26 supplies a voltage to be applied to a wiring(one of the wiring GSGD0 to GSGD3) corresponding to the selected stringunit SU among the wirings GSGD0 to GSGD3 which are connected to theselected block BLK in, for example, the read operation. The SGD_USELdriver 27_27 supplies voltages to be applied to wirings (three of thewiring GSGD0 to GSGD3) to which the voltage is not supplied from theSGD_SEL driver 27_28 among the wirings GSGD0 to GSGD3 which areconnected to the selected block BLK in, for example, the read operation.The SGS_SEL driver 27_28 supplies a voltage to be applied to a wiringGSGS which is connected to the selected block BLK in, for example, theread operation. The SGS_USEL driver 27_29 supplies voltages to beapplied to the wirings GSGS which are not connected to the selectedblock BLK in, for example, the read operation. The USG driver 27_30supplies voltages to be applied to the wirings GSGD0 to GSGD3 which arenot connected to the selected block BLK in, for example, the readoperation.

The voltage generation circuit 26 generates voltages VREAD, VCGRV, andthe like as voltages which are necessary for the word lines WL in, forexample, the read operation. The generated voltages VREAD and VCGRV aretransmitted to the various wirings CG0 to CG23, CGU, and UCG through,for example, the driver set 27. In addition, for example, the voltagegeneration circuit 26 generates voltages which are necessary for theselect gate lines SGD and SGS, and transmits the generated voltages tothe various wirings SGD_SEL, SGD_USEL, SGS_SEL, SGS_USEL, and USG viathe driver set 27 in the read operation.

Further, the voltage VREAD is a voltage which is applied to non-selectedword lines WL in the read operation, is a voltage which causes thememory cell transistor MT to be in an On state regardless of data storedtherein, and is, for example, 8.0 V. The voltage VCGRV is a general termof voltages which are lower than the voltage VREAD, and voltages whichhave a plurality of sizes and which are applied to the selected wordline WL in a case where the read operation is performed. Each of thevoltages, which have the plurality of sizes, corresponds to the datastored therein, and causes the memory cell transistor MT to be in the ONstate according to the data stored therein.

1.1.5.2 Configuration of Transmission Switch Group

Subsequently, a configuration of the transmission switch group providedin the row decoder according to the first embodiment will be describedwith reference to FIG. 6. FIG. 6 is a circuit diagram illustratingconfigurations of the transmission switch group and the block decodergroup of the semiconductor storage device according to the firstembodiment.

As illustrated in FIG. 6, the block decoder group 28_2 includes, forexample, four block decoders (28_2A, 28_2B, 28_2C, and 28_2D).

The transmission switch group 28_0 includes a plurality of transmissiontransistor groups TTr0, TTr1, TTr2, and TTr3. The transmissiontransistor groups TTr0 to TTr3 are provided to correspond to the blocksBLK0 to BLK3, respectively. More specifically, the transmissiontransistor group TTr0 includes transmission transistors TTr0_W0 toTTr0_W95, TTr0_D0 to TTr0_D3, and TTr0_S0. The transmission transistorgroup TTr1 includes transmission transistors TTr1_W0 to TTr1_W95,TTr1_D0 to TTr1_D3, and TTr1_S0.

In addition, the transmission switch group 28_1 includes a plurality oftransmission transistor groups TTr4, TTr5, TTr6, and TTr7. Thetransmission transistor groups TTr4 to TTr7 are provided to correspondto the blocks BLK4 to BLK7, respectively. More specifically, thetransmission transistor group TTr4 includes transmission transistorsTTr4_W0 to TTr4_W95, TTr4_D0 to TTr4_D3, and TTr4_S0. The transmissiontransistor group TTr5 includes transmission transistors TTr5_W0 toTTr5_W95, TTr5_D0 to TTr5_D3, and TTr5_S0.

Further, although not illustrated in FIG. 6, the transmission transistorgroups TTr2, TTr3, TTr6, and TTr7 have the same configurations as thetransmission transistor groups TTr0, TTr1, TTr4, and TTr5.

Gates of the transmission transistor groups TTr0 and TTr4 are commonlyconnected to a block decoder 28_2A, and gates of the transmissiontransistor groups TTr1 and TTr5 are commonly connected to a blockdecoder 28_2B. In the same manner, gates of the transmission transistorgroups TTr2 and TTr6 are commonly connected to a block decoder 28_2C,and gates of the transmission transistor groups TTr3 and TTr7 arecommonly connected to a block decoder 28_2D.

Each of the block decoders 28_2A to 28_2D decodes address information(for example, a block address BLKADD). Furthermore, each of the blockdecoders 28_2A to 28_2D controls ON/OFF states of relevant transmissiontransistors according to a decoding result, and electrically connectsthe wirings GWL0 to GWL95, GSGD0 to GSGD3, and GSGS to the word linesWL0 to WL95 of a relevant block BLK and the select gate lines SGD0 toSGD3 and SGS.

More specifically, in a case where the block BLK0 is selected, the blockdecoder 28_2A causes the transmission transistor group TTr0 to be in theON state and causes the transmission transistor group TTr4 to be in theON state. Therefore, as a result, the block BLK4 is simultaneouslyselected together with the block BLK0. Further, in this case, otherblock decoders 28_2B, 28_2C, and 28_2D cause the transmission transistorgroups TTr1 to TTr3 and TTr5 to TTr7 to be OFF states.

1.1.5.3 Configuration of Word Line Selection Circuit

Subsequently, a configuration of the word line selection circuitprovided in the row decoder according to the first embodiment will bedescribed with reference to FIG. 7.

FIG. 7 is a block diagram illustrating the configuration of the wordline selection circuit of the semiconductor storage device according tothe first embodiment. As illustrated in FIG. 7, the word line selectioncircuit 28_3 includes a zone selection circuit 280 and chunk selectioncircuits 281 and 282.

The zone selection circuit 280 includes a plurality of input ends (in anexample of FIG. 7, 25 input ends) which are connected to a wiringCG<23:0> and a wiring CGU, and a plurality of output ends (in theexample of FIG. 7, 96 output ends). The plurality of output ends arerespectively connected to nodes Zout (ZoutA<23:0>, ZoutB<23:0>,ZoutD<23:0>), and output a voltage of any one of the wiring CG<23:0> orthe wiring CGU.

In addition, the zone selection circuit 280 includes a plurality of zoneselection units (in the example of FIG. 7, four zone selection units280A, 280B, . . . , 280D). Each of the zone selection units 280A to 280Dincludes the 25 input ends which are connected to the wiring CG<23:0>and the wiring CGU, and the 24 output ends which are respectivelyconnected to the nodes ZoutA<23:0> to ZoutD<23:0>. The zone selectionunits 280A to 280D correspond to the zones Zn0 to Zn7, the zones Zn8 toZn15, the zones Zn16 to Zn23, and the zones Zn24 to Zn31, respectively,and select relevant zones Zn, respectively.

The zone selection circuit 280 selects eight subsequent zones Zn whichinclude the selected word line WL. More specifically, for example, in acase where the word line WL10 is selected, the word line WL is includedin the zone Zn3. In this case, the zone selection circuit 280 outputs avoltage of the wiring CG<23:0> to the chunk selection circuits 281 and282 via the node Zout corresponding to the eight subsequent selectedzones Zn (for example, the zones Zn0 to Zn7) which include the zone Zn3.In addition, the zone selection circuit 280 outputs a voltage of thewiring CGU to the chunk selection circuits 281 and 282 via the node Zoutcorresponding to non-selected zones Zn (for example, the zones Zn8 toZn31).

Each of the chunk selection circuits 281 and 282 includes the pluralityof input ends (in the example of FIG. 7, the 97 input ends) which areconnected to the plurality of output ends and the wiring UCG of the zoneselection circuit 280, and a plurality of output ends (in the example ofFIG. 7, the 96 output ends) which are connected to the wirings GWL0 toGWL95. More specifically, the output ends of the chunk selection circuit281 are connected to the wirings GWL0 to GWL95 corresponding to thewiring group CGI0 of the chunk CNK0, and the output ends of the chunkselection circuit 282 are connected to the wirings GWL0 to GLW95corresponding to the wiring group CGI1 of the chunk CNK1. The respectiveoutput ends of the chunk selection circuits 281 and 282 output a voltageof any one of the wiring CG<23:0> and the wiring CGU or UCG.

The chunk selection circuit 281 includes a plurality of chunk selectionunits (in the example of FIG. 7, four chunk selection units 281A, 281B,. . . , 281D). The chunk selection units 281A to 281D include total 25input ends including input ends, which are respectively connected to thenodes ZoutA<23:0> to ZoutD<23:0>, and an input end connected to thewiring UCG. In addition, the chunk selection units 281A to 281D include24 output ends which are connected to the wirings GWL0 to GWL23, GWL24to GWL47, . . . GWL72 to GWL95 corresponding to the wiring group CGI0.

The chunk selection circuit 282 includes a plurality of chunk selectionunits (in the example of FIG. 7, four chunk selection units 282A, 282B,. . . , 282D). The chunk selection units 282A to 282D include total 25input ends including input ends, which are respectively connected to thenodes ZoutA<23:0> to ZoutD<23:0> and the wiring UCG. In addition, thechunk selection units 282A to 282D include 24 output ends which areconnected to the wirings GWL0 to GWL23, GWL24 to GWL47, . . . GWL72 toGWL95 corresponding to the wiring group CGI1.

In addition, the chunk selection circuits 281 and 282 select a chunk CNKwhich is connected to the selected block BLK. More specifically, forexample, in a case where the block BLK3, which is the block BLKconnected to the chunk CNK0, is selected, the chunk CNK0 correspondingto the wiring group CGI0 becomes a selected chunk CNK, and the chunkCNK1 corresponding to the wiring group CGI1 becomes a non-selected chunkCNK. In this case, the chunk selection circuit 281 outputs a voltage ofthe node Zout to the wiring group CGI0, and the chunk selection circuit282 outputs a voltage of the wiring UCG to the wiring group CGI1.

1.1.5.4 Configurations of Zone Selection Unit and Chunk Selection Unit

Subsequently, configurations of the zone selection unit provided in thezone selection circuit and the chunk selection unit provided in thechunk selection circuit of the word line selection circuit according tothe first embodiment will be described with reference to FIG. 8.

FIG. 8 is a block diagram illustrating the configurations of the zoneselection unit and the chunk selection unit of the semiconductor storagedevice according to the first embodiment. FIG. 8 illustrates a zoneselection unit 280A and a chunk selection unit 281A as examples of thezone selection unit and the chunk selection unit.

Further, since the zone selection units 280B to 280D illustrated in FIG.7 have the same configurations as the zone selection unit 280A, thedescription thereof will not be repeated. In addition, since the chunkselection units 281B to 281D and 282A to 282D illustrated in FIG. 7 havethe same configurations as the chunk selection unit 281A, thedescription thereof will not be repeated.

As illustrated in FIG. 8, the zone selection unit 280A includes aplurality of switch circuits (in an example of FIG. 8, 8 switch circuits280A_0 to 280A_7). Each of the switch circuits 280A_0 to 280A_7 includesan input end connected to the wiring CGU. In addition, the switchcircuits 280A_0 to 280A_7 further include input ends respectivelyconnected to wirings CG<2:0>, CG<5:3>, CG<8:6>, CG<11:9>, CG<14:12>,CG<17:15>, CG<20:18>, and CG<23:21>, and output ends respectivelyconnected to nodes ZoutA<2:0>, ZoutA<5:3>, ZoutA<8:6>, ZoutA<11:9>,ZoutA<14:12>, ZoutA<17:15>, ZoutA<20:18>, and ZoutA<23:21>.

The switch circuits 280A_0 to 280A_7 respectively correspond to thezones Zn0 to Zn7. That is, in a case where the selected word line WL isincluded in the zones Zn corresponding to switch circuits 280A_0 to280A_7, the switch circuits 280A_0 to 280A_7 output voltages of thewirings CG<2:0>, CG<5:3>, CG<8:6>, CG<11:9>, CG<14:12>, CG<17:15>,CG<20:18>, and CG<23:21>. In addition, in a case where the selected wordline WL is not included in the zones Zn corresponding to switch circuits280A_0 to 280A_7, the switch circuits 280A_0 to 280A_7 output thevoltage of the wiring CGU.

The chunk selection unit 281A includes a plurality of switch circuits(in the example of FIG. 8, 8 switch circuits 281A_0 to 281A_7). Each ofthe switch circuits 281A_0 to 281A_7 includes an input end connected tothe wiring UCG. In addition, the switch circuits 281A_0 to 281A_7further include input ends respectively connected to the nodesZoutA<2:0>, ZoutA<5:3>, ZoutA<8:6>, ZoutA<11:9>, ZoutA<14:12>,ZoutA<17:15>, ZoutA<20:18>, and ZoutA<23:21>, and output endsrespectively connected to wirings GWL0 to GWL2, GWL3 to GWL5, GWL6 toGWL8, GWL9 to GWL11, GWL12 to GWL14, GWL15 to GWL17, GWL18 to GWL20, andGWL21 to GWL23.

In a case where the chunk CNK0 is selected, the switch circuits 281A_0to 281A_7 respectively output voltages of the nodes ZoutA<2:0>,ZoutA<5:3>, ZoutA<8:6>, ZoutA<11:9>, ZoutA<14:12>, ZoutA<17:15>,ZoutA<20:18>, and ZoutA<23:21>. In addition, in a case where the chunkCNK0 is not selected, the switch circuits 281A_0 to 281A_7 output thevoltage of the wiring UCG.

FIG. 9 is a circuit diagram illustrating a configuration of the switchcircuit provided in the zone selection unit according to the firstembodiment. FIG. 9 illustrates the switch circuit 280A_0 as an exampleof the switch circuit in the zone selection unit 280A. Further, sincethe switch circuits 280A 1 to 280A_7 illustrated in FIG. 8 have the sameconfiguration as the switch circuit 280A_0, the description thereof willnot be repeated.

As illustrated in FIG. 9, the switch circuit 280A_0 includes zone selecttransistors ZTr0 to ZTr5.

The respective zone select transistors ZTr0 to ZTr2 include first endsconnected to wirings CG<0> to CG<2>, second ends connected to nodesZoutA<0> to ZoutA<2>, and gates to which a signal SW1 is supplied.

The respective zone select transistors ZTr3 to ZTr5 include first endsconnected to the wiring CGU, second ends connected to the nodes ZoutA<0>to ZoutA<2>, and gates to which a signal SW2 is supplied.

The signals SW1 and SW2 are signals which have logical levels differentfrom each other, and which cause the zone select transistors ZTr0 toZTr5 to be in the ON state in a case of the “H” level and cause the zoneselect transistors ZTr0 to ZTr5 to be in the OFF state in a case of the“L” level. That is, the signals SW1 and SW2 are respectively at the “H”level and the “L” level in a case where the selected word line WL isincluded in the relevant zone Zn (in an example of FIG. 9, the zoneZn0), and the signals SW1 and SW2 are respectively at the “L” level andthe “H” level in a case where the selected word line WL is not includedin the relevant zone Zn.

FIG. 10 is a circuit diagram illustrating a configuration of the switchcircuit of the chunk selection unit according to the first embodiment.FIG. 10 illustrates the switch circuit 281A_0 as an example of theswitch circuit in the chunk selection unit 281A. Further, the switchcircuits 281A 1 to 281A_7 illustrated in FIG. 8 have the sameconfiguration as the switch circuit 281A_0, the description thereof willnot be repeated.

As illustrated in FIG. 10, the switch circuit 281A_0 includes chunkselect transistors CTr1 to CTr5.

The respective chunk select transistors CTr0 to CTr2 include first endsconnected to the nodes ZoutA<0> to ZoutA<2>, second ends connected tothe wirings GWL0 to GWL2, and gates to which a signal SW3 is supplied.

The respective chunk select transistors CTr3 to CTr5 include first endsconnected to the wiring UCG, second ends connected to the wirings GWL0to GWL2, and gates to which a signal SW4 is supplied.

The signals SW3 and SW4 are signals which have logical levels differentfrom each other, and which cause the chunk select transistors CTr0 toCTr5 to be in the ON state in a case of the “H” level and cause thechunk select transistors CTr0 to CTr5 to be in the OFF state in a caseof the “L” level. That is, the signals SW3 and SW4 are respectively atthe “H” level and the “L” level in a case where a relevant chunk CNK (inan example of FIG. 10, the chunk CNK0) is selected, and the signals SW3and SW4 are respectively at the “L” level and the “H” level in a casewhere the relevant chunk CNK is not selected.

1.1.5.5 Configuration of Driver Set

Subsequently, a configuration of the driver set of the semiconductorstorage device according to the first embodiment will be described indetail. FIG. 11 is a circuit diagram illustrating the configuration ofthe driver set of the semiconductor storage device according to thefirst embodiment. FIG. 11 illustrates examples of configurations of theCG driver 27_0, the CGU driver 27_24, and the UCG driver 27_25 among thevarious drivers illustrated in FIG. 5. Further, the configurations ofthe CG drivers 27_1 to 27_23 are the same as the configuration of the CGdriver 27_0, the description thereof will not be repeated.

As illustrated in FIG. 11, the voltage generation circuit 26 includesbooster circuits 261 and 262 which are used when the read operation isperformed. The booster circuits 261 and 262 respectively generate thevoltages VCGRV and VREAD, and supply the generated voltages to thedriver set 27. Further, the voltage generation circuit 26 may furtherinclude a booster circuit which is not illustrated in the drawing, maygenerate a voltage other than the voltages VCGRV and VREAD using thebooster circuit which is not illustrated in the drawing, and may supplythe generated voltage to the driver set 27.

The CG driver 27_0 selects any one of the voltages VCGRV and VREADgenerated in the voltage generation circuit 26, and transmits theselected voltage to the wiring CG<0>. Specifically, for example, the CGdriver 27_0 includes power select transistors VTr0 and VTr1. The powerselect transistor VTr0 includes a first end connected to an output endof the booster circuit 261, a second end connected to the wiring CG<0>,and a gate to which a signal SCG1 is supplied. The power selecttransistor VTr1 includes a first end connected to an output end of thebooster circuit 262, a second end connected to the wiring CG<0>, and agate to which a signal SCG2 is supplied.

The signals SCG1 and SCG2 are, for example, signals, one of whichbecomes the “H” level and the other one becomes the “L” level, and causethe power select transistors VTr0 and VTr1 to be in the ON state in acase of the “H” level and cause the power select transistors VTr0 andVTr1 to be in the OFF state in case of the “L” level. That is, thesignal SCG1 outputs the “H” level in a case where the voltage VCGRV istransmitted to the wiring CG<0>, and outputs the “L” level in a casewhere the voltage VCGRV is not transmitted. The signal SCG2 outputs the“H” level in a case where the voltage VREAD is transmitted to the wiringCG<0>, and outputs the “L” level in a case where the voltage VREAD isnot transmitted.

The CGU driver 27_24 selects the voltage VREAD generated in the voltagegeneration circuit 26, and transmits the voltage VREAD to the wiringCGU. Specifically, for example, the CGU driver 27_24 includes a powerselect transistor VTr2. The power select transistor VTr2 includes afirst end connected to the output end of the booster circuit 262, asecond end connected to the wiring CGU, and a gate to which a signalSCGU is supplied.

For example, the signal SCGU causes the power select transistor VTr2 tobe in the ON state in a case of the “H” level, and causes the powerselect transistor VTr2 to be in the OFF state in a case of the “L”level. That is, the signal SCGU outputs the “H” level in a case wherethe voltage VREAD is transmitted to the wiring CGU, and outputs the “L”level in a case where the voltage VREAD is not transmitted.

The UCG driver 27_25 selects anyone of the voltage VREAD generated inthe voltage generation circuit 26 and a voltage VCC supplied from theoutside, and transmits the selected voltage to the wiring UCG.Specifically, for example, the UCG driver 27_25 includes power selecttransistors VTr3 and VTr4. The power select transistor VTr3 includes afirst end connected to the output end of the booster circuit 262, asecond end connected to the wiring UCG, and a gate to which a signalSUCG1 is supplied. The power select transistor VTr4 includes a first endconnected to the voltage VCC, a second end connected to the wiring UCG,and a gate to which the signal SUCG2 is supplied. The voltage VCC isexternal power supplied from the outside of the semiconductor storagedevice 20. The voltage VCC has magnitude to the extent that does notaffect the memory cell transistor MT even in a case where the voltageVCC is applied to the word line WL when the read operation is performed,and is lower than, for example, the voltage VREAD. More specifically,for example, the voltage VCC is 3.3 V.

The signals SUCG1 and SUCG2 are, for example, signals, one of whichbecomes the “H” level and the other one becomes the “L” level, and causethe power select transistors VTr3 and VTr4 to be in the ON state in thecase of the “H” level, and cause the power select transistors VTr3 andVTr4 to be in the OFF state in the case of the “L” level. That is, thesignal SUCG1 outputs the “H” level in the case where the voltage VCC istransmitted to the wiring UCG, and outputs the “L” level in the casewhere the voltage VCC is not transmitted. The signal SUCG2 outputs the“H” level in the case where the voltage VREAD is transmitted to thewiring UCG, and outputs the “L” level in the case where the voltageVREAD is not transmitted to the wiring UCG.

Further, the CG driver 27_0, the CGU driver 27_24, and the UCG driver27_25 may further include a power select transistor which is capable oftransmitting a voltage other than the voltages VCGRV, VREAD, and VCC,and which is not illustrated in the drawing. In any case, each of the CGdriver 27_0, the CGU driver 27_24, and the UCG driver 27_25 causes anyone of the internal power select transistors VTr to be ON state, andthus it is possible to transmit a specific voltage to the wirings CG<0>,CGU, and UCG.

1.2 Operation

Subsequently, an operation of the semiconductor storage device accordingto the first embodiment will be described.

1.2.1 Overview of Read Operation

First, an overview of the read operation which is performed in thesemiconductor storage device according to the first embodiment will bedescribed with reference to FIG. 12. In FIG. 12, the read operation isdescribed while it is assumed that a start timing of the read operationis a point of time at which the signal/RB becomes the “L” level.

In the example of FIG. 12, the read operation is classified into four ormore periods (a period A, a period B, a period C, a period D, . . . ).For example, the period A ranges from time T10 to time T20, the period Branges from time T20 to time T30, the period C ranges from time T30 totime T40, and the period D is a period subsequent to time T40.

As illustrated in FIG. 12, at time T10, the logic control circuit 23notifies the controller 10 of the signal/RB at the “L” level accordingto a read command from the controller 10. Therefore, the read operationstarts in the semiconductor storage device 20.

In the period A, the sequencer 25 initializes settings which arenecessary for the read operation.

At time T20, the read operation is transitioned from the period A to theperiod B when the initial setting ends. In period B, the sequencer 25causes the row decoder 28 to confirm the block address BLKADD based onthe address ADD received from the controller 10. That is, block BLK tobe selected is not confirmed yet during the period B.

In addition, the sequencer 25 instructs the voltage generation circuit26 to generate a high voltage (for example, voltage VREAD) which isnecessary for the read operation. As a result, at time T20, the boostercircuit 262 starts boosting to the voltage VREAD.

Further, the sequencer 25 electrically connects the booster circuit 262to the wiring UCG via the UCG driver 27_25 during the period B. Inaddition, the sequencer 25 electrically connects the wiring UCG to allthe wirings GWL in the wiring groups CGI0 and CGI1 via the chunkselection circuits 281 and 282. Therefore, all the wirings GWL arecharged up to the voltage VREAD according to the boosting performed bythe booster circuit 262.

At time T30, the read operation is transitioned from the period B to theperiod C with the confirmation of the block address BLKADD. In theperiod C, the sequencer 25 starts preparing a block which is necessaryfor the read operation. In the period C, the sequencer 25 may continueto charge all the wirings GWL by the voltage VREAD subsequent to theperiod B.

At time T40, the read operation is transitioned from the period C to theperiod D with the end of preparation of a clock. In the period D, thesequencer 25 instructs the voltage generation circuit 26 to generate alow voltage (for example, voltage VCGRV) which is necessary for the readoperation. As a result, at time T40, the booster circuit 261 startsboosting to the voltage VCGRV. As described above, the voltage VCGRV islower than the voltage VREAD. Therefore, the boosting to the voltageVCGRV by the booster circuit 261 is rapidly completed rather than theboosting to the voltage VREAD by the booster circuit 262. Further, asdescribed above, the booster circuit 262 starts charging from time T20prior to time T40. Therefore, at time T40, the boosting performed by thebooster circuit 262 on all the wirings GWL to the voltage VREAD hasalready completed or is almost completed.

Further, since the block address BLKADD is confirmed by time T40, it ispossible to designate the selected block BLK and the selected word lineWL. Therefore, the sequencer 25 electrically connects the boostercircuit 261 to the wirings CG<23:0> and CGU via the CG drivers 27_0 to27_23 and the CGU driver 27_24. In addition, the sequencer 25electrically connects the wirings CG<23:0> and CGU to the wiring groupCGI corresponding to the selected chunk CNK via the zone selectioncircuit 280 and the chunk selection circuit 281 or 282. In addition, thesequencer 25 electrically connects the wiring group CGI corresponding tothe selected chunk CNK to the word lines WL in the selected block BLKvia a relevant block decoder. Therefore, the word lines WL in theselected block BLK are charged up to a voltage which is necessary forreading, and thus data is read.

Hereinabove, the data read operation ends.

1.2.2 Timing Chart

Subsequently, a timing chart of the read operation performed in thesemiconductor storage device according to the first embodiment will bedescribed with reference to FIG. 13. FIG. 13 illustrates changes in thevoltages of the booster circuit 262 and the wirings GWL after time T20of the read operation. In addition, in FIG. 13, the wirings GWL aredivided into three types, that is, a wiring GWL (hereinafter, referredto as a “selected wiring GWL connected to the selected block BLK”)corresponding to the selected word line WL of the wirings GWL connectedto the selected block BLK, a wiring GWL (hereinafter, referred to as a“non-selected wiring GWL connected to the selected block BLK”)corresponding to a non-selected word line WL among wirings GWL connectedto the selected block BLK, and wirings GWL (hereinafter, referred to as“other wirings GWL”) other than the wiring GWL connected to the selectedblock BLK. In addition, in a case where all the three types areincluded, the wirings are referred to as “all wirings GWL”.

As illustrated in FIG. 13, at time T20, the booster circuit 262 startsboosting to the voltage VREAD from a voltage VSS (for example, 0 V).

As described above, since which block BLK is the selected block BLK isnot confirmed at time T20, it is difficult to transmit differentvoltages for each wiring group CGI or for each wiring GWL. However, itis possible to transmit the same voltage to all the wirings GWL of theentire wiring group CGI. Therefore, the sequencer 25 electricallyconnects the booster circuit 262 to all the wirings GWL via the UCGdriver 27_25. Therefore, all the wirings GWL are charged substantiallysimultaneously with the booster circuit 262 by the voltage VREAD. Here,“substantially simultaneously” means that a difference in timings of thevoltage increases between the booster circuit 262 and the wiring GWL iswithin dozens of nanoseconds (ns). The difference in rising timings ofthe voltages includes delays caused by resistance elements, such as theUCG driver 27_25 and the chunk selection circuit 281, existing betweenthe booster circuit 262 and the wirings GWL.

In addition, since the booster circuit 262 starts the boosting in astate of being electrically connected to all the wirings GWL, gradientsof voltage increase of all the wirings GWL are equivalent to a gradientof voltage increase of the booster circuit 262. The gradients of voltageincrease of all the wirings GWL are steeper compared to a gradient ofthe voltage increase in a case where the boosting starts in a state(that is, a state in which resistance loads corresponding to the wordlines WL are further added) of being further electrically connected tothe word lines WL via the transmission switch group 28_0 or 28_1. As aresult, the voltage VREAD is more rapidly reached.

At time T40, which block BLK is the selected block BLK is confirmed. Asa result, the sequencer 25 electrically connects the booster circuit 262to all the wirings GWL, which are connected to the selected block BLK,via the CG drivers 27_0 to 27_23 and the CGU driver 27_24. Therefore,the voltage VREAD is subsequently transmitted to all the wirings GWLconnected to the selected block BLK. In contrast, the sequencer 25electrically disconnects the booster circuit 262 from other wirings GWL,and causes the voltage of other wirings GWL to be discharged to thevoltage VSS.

At time T41, the sequencer 25 electrically disconnects the boostercircuit 262 from the selection wiring GWL connected to the selectedblock BLK, and causes the voltage of the selected wiring GWL connectedto the selected block BLK to be discharged to the voltage VSS.

At time T42, the sequencer 25 electrically connects the booster circuit261 to the selected wiring GWL connected to the selected block BLK viaany one of the CG driver 27_0 to 27_23. Therefore, the selected wiringGWL connected to the selected block BLK is charged by the voltage VCGRV.In addition, the sequencer 25 electrically connects other wirings GWL tothe external power via the UCG driver 27_25. Therefore, other wiringsGWL are charged by the voltage VCC.

Further, at a point of time T42, non-selected wirings GWL connected tothe selected block BLK are completely charged by the voltage VREAD.Therefore, subsequent to time T42, data from the selected block BLK isread.

1.3 Advantage According to First Embodiment

According to the first embodiment, it is possible to reduce the timewhich is required to read data. The advantage will be described below.

The voltage VREAD has a voltage value which is larger than that ofanother voltage VCRV or the like. In addition, since the non-selectedwirings GWL connected to the selected block BLK have the majority of 96wirings GWL, loads for charging are also large. Therefore, long time isnecessary to perform charging by the voltage VREAD rather than chargingby the voltage VCRV or the like.

In the read operation, the semiconductor storage device according to thefirst embodiment starts charging all the wirings GWL of all the wiringgroups CGI by the voltage VREAD from time T20, that is, before the blockaddress is confirmed. Therefore, it is possible to start charging thewirings GWL, which are scheduled to be charged by the voltage VREAD, bythe voltage VREAD at timing earlier than timing which starts charging bythe voltage VREAD after the block address is confirmed. Therefore, attime T42, that is, after the block address is confirmed, it is possibleto complete the charging by the voltage VREAD, and it becomes possibleto read the data. Accordingly, it is possible to reduce time which isrequired to read the data.

In addition, timing at which the booster circuit 262 performs boostingis substantially simultaneous with timing at which the wiring group CGIis charged. Therefore, it is possible to bring forward the timing atwhich the wiring group CGI is charged, and, eventually, it is possibleto reduce the time which is required to read the data.

Further, the wiring group CGI is charged by the voltage VREAD in a stateof being electrically disconnected from the word lines WL. Therefore, itis possible to reduce the loads in a case where the wiring group CGI ischarged, rather than the case where charging is performed in a state ofbeing electrically connected to the word lines WL. Therefore, thegradient of the voltage increase due to the boosting performed by thebooster circuit 262 is equivalent to a gradient of the voltage increasedue to the charging of the wiring group CGI.

In addition, the wiring group CGI is charged by the voltage VREAD via apath which passes via the UCG driver 27_25 instead of a path whichpasses via the CG drivers 27_0 to 27_23 or the CGU driver 27_24.

FIG. 14 is a circuit diagram illustrating a wiring charging route when aread operation is performed in a comparative example. FIG. 15 is acircuit diagram illustrating a wiring charging route when the readoperation is performed in the semiconductor storage device according tothe first embodiment. FIGS. 14 and 15 schematically illustrate routes ofcharging or transmitting the voltage VREAD in a case where the wiringGWL0 of the wiring group CGI0 becomes the non-selected wiring GWLconnected to the selected block BLK as an example of the read operation.Specifically, FIG. 14 illustrates a route in a case where the wiringGWL0 of the wiring group CGI0 is charged by the voltage VREAD via the CGdriver 27_0 or the CGU driver 27_24. FIG. 15 illustrates a route in acase where the wiring GWL0 of the wiring group CGI0 is charged by thevoltage VREAD via the UCG driver 27_25.

As illustrated in FIG. 14, in a case where the voltage VREAD istransmitted to the wiring GWL0 of the wiring group CGI0, the voltageVREAD is transmitted via three switch circuits, that is, the powertransmission transistor VTr1 or VTr2, the zone select transistor ZTr0 orVTr3, and the chunk select transistor CTr0 in the route passing via theCG driver 27_0 or the CGU driver 27_24.

In contrast, as illustrated in FIG. 15, it is possible to transmit thevoltage VREAD via two switch circuits, that is, the power transmissiontransistor VTr4 and the chunk select transistor CTr3 in the routepassing via the UCG driver 27_25. In this manner, the route passing viathe UCG driver 27_25 does not pass via the switch circuit 280_A0 in thezone selection unit 280A, and thus it is possible to charge the wiringGWL0 via a fewer number of switch circuits. Therefore, it is possible toreduce the loads when charging is performed, and, eventually, it ispossible to reduce time which is required to perform charging up to thevoltage VREAD. Therefore, it is possible to reduce time which isrequired to read the data.

2. Second Embodiment

Subsequently, a semiconductor storage device according to a secondembodiment will be described. In the semiconductor storage deviceaccording to the first embodiment, all the wiring groups CGI are chargedby the voltage VREAD before the block address is confirmed. In contrast,in the semiconductor storage device according to the second embodiment,all the wiring groups CGI are charged by a voltage, which is lower thanthe voltage VREAD, before the block address is confirmed. In thefollowing, the same symbols are attached to the same components as inthe first embodiment, the description thereof will not be repeated, andonly parts which are different from the first embodiment will bedescribed.

2.1 Configuration of Driver Set

FIG. 16 is a circuit diagram illustrating a configuration of a driverset of the semiconductor storage device according to the secondembodiment. FIG. 16 corresponds to FIG. 11 described in the firstembodiment.

As illustrated in FIG. 16, the voltage generation circuit 26 furtherincludes a booster circuit 263. The booster circuit 263 generates avoltage VX2, and supplies the voltage VX2 to the driver set 27. Thevoltage VX2 has magnitude to the extent that does not affect the memorycell transistor MT even in a case where the voltage VX2 is applied tothe word line WL when the read operation is performed, and is lower thanthe voltage VREAD. More specifically, for example, the voltage VX2 is4.0 V.

The CG driver 27_0 selects anyone of the voltages VCGRV, VREAD, and VX2generated by the voltage generation circuit 26, and transmits theselected voltage to the wiring CG<0>. Specifically, for example, the CGdriver 27_0 further includes a power select transistor VTr5. The powerselect transistor VTr5 includes a first end connected to an output endof the booster circuit 263, a second end connected to the wiring CG<0>,and a gate to which a signal SCG3 is supplied.

The signals SCG1 to SCG3 include, for example, any one signal at the “H”level and the remaining two signals at the “L” level. The signal SCG3causes the power select transistor VTr5 to be in the ON state in a caseof the “H” level and to be in OFF state in a case of the “L” level. Thatis, the signal SCG3 outputs the “H” level in a case where the voltageVX2 is transmitted to the wiring CG<0>, and outputs the “L” level in acase where the voltage VX2 is not transmitted.

The UCG driver 27_25 selects any one of the voltages VREAD and VX2,generated by the voltage generation circuit 26, and the voltage VCC, andtransmits the selected voltage to the wiring UCG. Specifically, forexample, the UCG driver 27_25 further includes a power select transistorVTr6. The power select transistor VTr6 includes a first end connected tothe output end of the booster circuit 263, a second end connected to thewiring UCG, and a gate to which a signal SUCG3 is supplied.

The signals SUCG1 to SUCG3 include, for example, any one signal at the“H” level and the remaining two signals at the “L” level. The signalSUCG3 outputs the “H” level in a case where the voltage VX2 istransmitted to the wiring UCG, and outputs the “L” level in a case wherethe voltage VX2 is not transmitted.

2.2 Read Operation

Subsequently, a read operation of the semiconductor storage deviceaccording to the second embodiment will be described.

FIG. 17 is a timing chart illustrating the read operation performed bythe semiconductor storage device according to the second embodiment.FIG. 17 corresponds to FIG. 13 described in the first embodiment.

As illustrated in FIG. 17, at time T20, the booster circuits 262 and 263start boosting to the voltages VREAD and VX2 from the voltage VSS (forexample, 0 V), respectively. The sequencer 25 electrically connectsbetween the booster circuit 263 and all the wirings GWL via the UCGdriver 27_25. Therefore, all the wirings GWL are charged by the voltageVX2.

At time T40, the sequencer 25 electrically connects the booster circuit263 to the selected wiring GWL connected to the selected block BLK viaany one of the CG drivers 27_0 to 27_23. Therefore, the voltage VX2 issubsequently transmitted to the selected wiring GWL connected to theselected block BLK. In addition, the sequencer 25 electrically connectsthe booster circuit 262 to the non-selected wirings GWL connected to theselected block BLK via the CG drivers 27_0 to 27_23 and CGU driver27_24. Therefore, the non-selected wirings GWL connected to the selectedblock BLK are further charged by the voltage VREAD from the voltage VX2.In contrast, the sequencer 25 electrically disconnects the boostercircuit 263 from other wirings GWL, and causes the voltages of otherwirings GWL to be discharged to the voltage VSS.

At time T41, the sequencer 25 electrically disconnects the boostercircuit 263 from the selected wiring GWL connected to the selected blockBLK, and causes the voltage of the selected wiring GWL connected to theselected block BLK to be discharged to the voltage VSS.

At time T42, the sequencer 25 electrically connects the booster circuit261 to the selected wiring GWL connected to the selected block BLK viaany one of the CG drivers 27_0 to 27_23. Therefore, the selected wiringGWL connected to the selected block BLK is charged by the voltage VCGRV.In addition, the sequencer 25 electrically connects other wirings GWL tothe external power via the UCG driver 27_25. Therefore, other wiringsGWL are charged by the voltage VCC.

Further, at the point of time T42, the non-selected wirings GWLconnected to the selected block BLK are completely charged by thevoltage VREAD. Therefore, subsequent to time T42, the data is rapidlyread from the selected block BLK.

2.3 Advantage According to Second Embodiment

According to the second embodiment, the sequencer 25 electricallyconnects the booster circuit 263 to all the wirings GWL via the UCGdriver 27_25 before the block address is confirmed. Therefore, all thewirings GWL are charged up to the voltage VX2 until time T40. Therefore,subsequent to time T40 at which the block address is confirmed, thenon-selected wirings GWL connected to the selected block BLK may becharged by a difference between the voltage VX2 and the voltage VREAD,and thus it is possible to reduce time which is required for charging.Therefore, it is possible to reduce time required for the readoperation. In addition, the voltages of all the wirings GWL are notcharged up to the voltage VREAD which is a high voltage, and thus it ispossible to reduce the loads applied to the wiring group CGI.

2.4 First Modified Example

Further, in the second embodiment, a case where the voltage VX2 isapplied to the selected wiring GWL connected to the selected block BLKover a period of time T40 to time T41 has been described. However,embodiments are not limited thereto. For example, the voltage VREAD maybe applied to the selected wiring GWL connected to the selected blockBLK.

FIG. 18 is a timing chart illustrating a read operation of asemiconductor storage device according to a first modified example ofthe second embodiment. FIG. 18 corresponds to FIG. 17 described in thesecond embodiment, and is the same as FIG. 17 other than operations fromtime T40 to time T41.

As illustrated in FIG. 18, at time T40, the sequencer 25 electricallyconnects the booster circuit 262 to the selected wiring GWL connected tothe selected block BLK via any one of the CG drivers 27_0 to 27_23.Therefore, the selected wiring GWL connected to the selected block BLKis further charged by the voltage VREAD from the voltage VX2.

In a case where the operation is performed as described above, it ispossible to apply the voltage VREAD which is higher than the voltage VX2before the voltage VCRV is applied to the selected word line WL.Therefore, it is possible to perform a more stable read operation.

2.5 Second Modified Example

Further, in the second embodiment, a case where the voltage VX2 isapplied to all the wirings GWL before the block address is confirmed hasbeen described. However, embodiments are not limited thereto. Forexample, the voltage VCC may be applied to all the wirings GWL from theexternal power before the block address is confirmed.

FIG. 19 is a timing chart illustrating a read operation of asemiconductor storage device according to a second modified example ofthe second embodiment. FIG. 19 corresponds to FIG. 17 described in thesecond embodiment.

As illustrated in FIG. 19, at time T20, the booster circuit 262 startsboosting to the voltage VREAD from the voltage VSS (for example, 0 V).

The sequencer 25 electrically connects between the external power andall the wirings GWL via the UCG driver 27_25. Therefore, all the wiringsGWL are charged by the voltage VCC.

At time T40, the sequencer 25 electrically connects the external powerto the selected wiring GWL connected to the selected block BLK via anyone of the CG drivers 27_0 to 27_23. Therefore, the voltage VCC issubsequently transmitted to the selected wiring GWL connected to theselected block BLK. In addition, the sequencer 25 electrically connectsthe booster circuit 262 to the non-selected wirings GWL connected to theselected block BLK via the CG drivers 27_0 to 27_23 and CGU driver27_24. Therefore, the non-selected wirings GWL connected to the selectedblock BLK are further charged by the voltage VREAD from the voltage VCC.In contrast, the sequencer 25 electrically disconnects the externalpower from other wirings GWL, and causes the voltages of other wiringsGWL to be discharged to the voltage VSS.

At time T41, the sequencer 25 electrically disconnects the externalpower to the selected wiring GWL connected to the selected block BLK,and causes the voltage of the selected wiring GWL connected to theselected block BLK to be discharged to the voltage VSS.

At time T42, the sequencer 25 electrically connects the booster circuit261 to the selected wiring GWL connected to the selected block BLK viaany one of the CG drivers 27_0 to 27_23. Therefore, the selected wiringGWL connected to the selected block BLK is charged by the voltage VCGRV.In addition, the sequencer 25 electrically connects other wirings GWL tothe external power via the UCG driver 27_25. Therefore, other wiringsGWL are charged by the voltage VCC.

Further, at the point of time T42, the non-selected wirings GWLconnected to the selected block BLK are completely charged by thevoltage VREAD. Therefore, subsequent to time T42, the data is rapidlyread from the selected block BLK.

In a case where the operation is performed as described above and, forexample, where leakage occurs in the wiring GWL, it is possible toprevent the voltage to be supplied to the wiring GWL from fluctuating.In addition, in a case where the voltage VX2 is transmitted to thewiring GWL in a state in which the leakage occurs in the wiring GWL,there is a possibility that the voltage of the wiring GWL significantlyfluctuates from the voltage VX2 by being affected by the leakage. Inaddition, the voltage VX2 is used for many other purposes in thesemiconductor storage device 20. Therefore, a case where a value of thevoltage VX2 significantly fluctuates is not preferable in a point ofview in which a device in the semiconductor storage device 20 isnormally operated. In contrast, in the modified example, since thevoltage VCC is supplied from the external power, the voltage VCC changesvery little even though being affected by leakage occurred in the wiringGWL. Therefore, it is possible to prevent leakage from affecting anotherdevice in the semiconductor storage device 20 and it is possible tosecurely charge the wiring GWL. Therefore, it is possible to reduce timewhich is required for charging.

3. The Others

Embodiments are not limited to the above-described respectiveembodiments and forms described in the respective modified examples, andvarious changes are possible. In the above-described respectiveembodiments and the respective modified examples, the cases where onetype of voltage VREAD is transmitted to the word lines WL (non-selectedword lines WL) corresponding to the non-selected wirings GWL connectedto the selected block BLK are described. However, embodiments are notlimited thereto. For example, different voltages may be supplied to thenon-selected word lines WL according to whether the non-selected wordline is on an upper layer or a lower layer of the selected word line WL.In this case, the word line selection circuit 28_3 may be a chargingroute passing via a further switch circuit. However, even in theabove-described case, the charging route, which passes via the UCGdriver 27_25, may pass via a smaller number of switch circuits than thecharging route which passes via the CG drivers 27_0 to 27_23 or the CGUdriver 27_24. Therefore, it is possible to acquire the same advantage asin the above-described respective embodiments and the respectivemodified examples.

In addition, in the above-described respective embodiments and therespective modified examples, the case where all the wirings GWL arecharged via the UCG driver 27_25 before the block address is confirmedis described. However, embodiments are not limited thereto. For example,all the wirings GWL may be charged via the CG drivers 27_0 to 27_23 andthe CGU driver 27_24 before the block address is confirmed. In thiscase, as described above, although the number of switch circuits to bepassed is larger than the charging route via the UCG driver 27_25, thepower transmission transistor VTr4 is not required. Therefore, it ispossible to form the driver set 27 with a smaller number of elements.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor storage device comprising: a wordline and a wiring; a first transistor that is controlled to connect theword line to the wiring; a first booster circuit configured to boost anoutput voltage thereof to a first voltage; a second transistor that iscontrolled to connect an output of the first booster circuit to thewiring; and a control circuit configured to control the first boostercircuit, and the first and second transistors during a read operation,wherein during the read operation, the control circuit controls thefirst booster circuit to start boosting the output voltage thereof tothe first voltage while controlling the second transistor to connect theoutput of the first booster circuit to the wiring so that a voltage ofthe wiring rises together with the output voltage of the first boostercircuit, and after the output voltage of the first booster circuit hasreached the first voltage, the control circuit controls the firsttransistor to connect the word line to the wiring.
 2. The semiconductorstorage device according to claim 1, wherein after the output voltage ofthe first booster circuit has reached the first voltage and the controlcircuit controls the first transistor to connect the word line to thewiring, the control circuit causes the voltage of the wiring to be aground voltage and then controls the voltage of the wiring to be asecond voltage that is lower than the first voltage.
 3. Thesemiconductor storage device according to claim 1, further comprising: asecond booster circuit configured to boost an output voltage thereof toa second voltage; and a third transistor that is controlled to connectan output of the second booster circuit to the wiring, wherein thecontrol circuit controls the second transistor to disconnect the outputof the first booster circuit from the wiring and controls the thirdtransistor to connect the output of the second booster circuit to thewiring, to cause the voltage of the wiring to be at the second voltage.4. The semiconductor storage device according to claim 3, wherein theword line is a selected word line for the read operation.
 5. Thesemiconductor storage device according to claim 1, wherein the word lineis a non-selected word line for the read operation, and after the outputvoltage of the first booster circuit has reached the first voltage andthe control circuit controls the first transistor to connect the wordline to the wiring, the control circuit maintains the voltage of thewiring to be at the first voltage while a voltage of a selected wordline is at a second voltage that is less than the first voltage.
 6. Thesemiconductor storage device according to claim 1, wherein the firsttransistor is connected to a block selection signal line.
 7. Thesemiconductor storage device according to claim 1, further comprising: asecond booster circuit configured to boost an output voltage thereof toa second voltage that is higher than the first voltage; and a thirdtransistor that is controlled to connect an output of the second boostercircuit to the wiring, wherein after the output voltage of the firstbooster circuit has reached the first voltage and the control circuitcontrols the first transistor to connect the word line to the wiring,the control circuit controls the second transistor to disconnect theoutput of the first booster circuit from the wiring and controls thethird transistor to connect the output of the second booster circuit tothe wiring, to cause the voltage of the wiring to be at the secondvoltage.
 8. The semiconductor storage device according to claim 7,wherein the word line is a non-selected word line for the readoperation.
 9. The semiconductor storage device according to claim 8,further comprising: a fourth transistor that is controlled to connectanother wiring to a selected word line for the read operation; a thirdbooster circuit configured to boost an output voltage thereof to a thirdvoltage that is lower than the first voltage; and a fifth transistorthat is controlled to connect an output of the third booster circuit tosaid another wiring, wherein during the read operation, after saidanother wiring has reached the first voltage, the control circuitcontrols the fourth transistor to connect the selected word line to saidanother wiring, causes the voltage of said another wiring to be a groundvoltage, and then controls the fifth transistor to connect the output ofthe third booster circuit to said another wiring, to cause the voltageof said another wiring to be at the third voltage.
 10. The semiconductorstorage device according to claim 1, wherein a gradient of voltageincrease of the first booster circuit to the first voltage issubstantially the same as a gradient of voltage increase of the wiring.11. A semiconductor storage device comprising: first and second wordlines; a voltage generation circuit; a plurality of wirings; a drivecircuit configured to selectively apply voltages generated by thevoltage generation circuit to the wirings; a first transistor that iscontrolled to connect one of the wirings to the first word line; asecond transistor that is controlled to connect another one of thewirings to the second word line; and a control circuit configured tocontrol the voltage generation circuit, the drive circuit and the firstand second transistors, wherein during a read operation, the controlcircuit controls the voltage generation circuit to generate a firstvoltage at an output thereof, the drive circuit to apply the firstvoltage from the voltage generation circuit to the plurality of wirings,and after the wirings have reached the first voltage, control the firstand second transistors to connect the respective wirings to the firstand second word lines.
 12. The semiconductor storage device according toclaim 11, wherein a gradient of voltage increase to the first voltage ofthe output of the voltage generation circuit is substantially the sameas a gradient of voltage increase of the wirings.
 13. The semiconductorstorage device according to claim 11, wherein the first and secondtransistors are turned on by a block selection signal and the voltagelevel of the wirings has increased to the first voltage when the blockselection signal is applied to gates of the first and secondtransistors.
 14. The semiconductor storage device according to claim 13,wherein the first word line is a selected word line for the readoperation and the second word line is a non-selected word line for theread operation.
 15. The semiconductor storage device according to claim14, wherein after the block selection signal is applied to gates of thefirst and second transistors, the control circuit causes the voltagelevel of the first word line to be at a ground voltage, and then toincrease to a second voltage that is less than the first voltage. 16.The semiconductor storage device according to claim 15, wherein afterthe block selection signal is applied to gates of the first and secondtransistors, the control circuit causes the voltage level of the secondword line to be maintained at the first voltage during the readoperation.
 17. The semiconductor storage device according to claim 15,wherein after the block selection signal is applied to gates of thefirst and second transistors, the control circuit causes the voltagelevel of the second word line to increase to a third voltage that ishigher than the first voltage and maintained at the third voltage duringthe read operation.
 18. The semiconductor storage device according toclaim 11, wherein the drive circuit includes a plurality of firsttransistors that are controlled to connect a first output of the voltagegeneration circuit to the wirings and a plurality of second transistorsthat are controlled to connect a second output of the voltage generationcircuit to the wirings.
 19. The semiconductor storage device accordingto claim 18, further comprising: a plurality of additional word lines,wherein the first word lines, the second word line, and the additionalword lines are connected to a block of memory cells, and a total numberof the first word lines, the second word line, and the additional wordlines is greater than a total number of the wirings connected to thedrive circuit.
 20. The semiconductor storage device according to claim19, wherein the total number of the first word lines, the second wordline, and the additional word lines is an integer multiple of the totalnumber of the wirings connected to the drive circuit.